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NJG1142KA1 - 1 - ver.2010-05-21 wide band low noise amplifier gaas mmic general description package outline the NJG1142KA1 is a wide band low noise amplifier gaas mmic designed for mobile tv application. a nd this amplifier can be tuned to wide frequency (170~1680mhz). the NJG1142KA1 has a lna pass-through function to select high gain mode or low gain mode by low control voltage operation. the NJG1142KA1 features low current consumption, high linearity. an ultra-small and ultra-thin package of flp6-a1 is adopted. features wide operating frequency range 170mhz~1680mhz low voltage operation 2.8v typ. [high gain mode] low current consumption 6ma typ. high gain +14.0db typ. low noise figure 1.5db typ. high p -0.1db compression 0dbm typ. high input ip3 +2.0dbm typ. [low gain mode] low current consumption 11 a typ. gain (low loss) -1.0db typ. high p -0.1db compression +17dbm typ. high input ip3 +22.0dbm typ. external components count 3 pcs. (capacitor: 2pcs, inductor: 1pc) small package size flp6-a1 (package size: 1.6mm x 1.6mm x 0.55mm typ.) lead -free and halogen-free pin configuration truth table v ctl lna mode h high gain mode l low gain mode note: the information on this datasheet is subject to change without notice NJG1142KA1 pin connection 1. vctl 2. gnd 3. rfout 4. gnd 5. gnd 6. rfin (top view) 3 4 5 6 2 1 rfin rfout vctl gnd gnd gnd lo g ic circuit bias circuit 1pin index ?h? = v ctl(h) ?l? = v ctl(l)
NJG1142KA1 - 2 - absolute maximum ratings t a =+25c, z s =z l =50 ohm parameter symbol conditions ratings units supply voltage v dd 5.0 v control voltage v ctl 5.0 v input power p in v dd =2.8v +15 dbm power dissipation p d 4-layer fr4 pcb with through-hole (74.2mmx74.2mm), t j =150c 580 mw operating temperature t opr -40~+85 c storage temperature t stg -55~+150 c electrical characteristics dc characteristics general conditions: v dd =2.8v, t a =+25c, z s =z l =50 ohm, with application circuit parameters symbol conditions min typ max units operating voltage v dd 2.3 2.8 3.6 v control voltage (high) v ctl(h) 1.3 1.8 3.6 v control voltage (low) v ctl(l) 0.0 0.0 0.5 v operating current1 i dd1 rf off, v ctl =1.8v - 6.0 9.5 ma operating current2 i dd2 rf off, v ctl =0v - 11.0 25.0 a control current i ctl rf off, v ctl =1.8v - 6.0 10.0 a
NJG1142KA1 - 3 - electrical characteristics rf characteristics1 (high gain mode) conditions: v dd =2.8v, v ctl =1.8v, f rf =170~900mhz, t a =+25c, z s =z l =50ohm, with application circuit parameters symbol conditions min typ max units frequency f rf 170 620 1680 mhz small signal gain1 gain1 exclude pcb, connector losses*1 11.0 14.0 18.0 db noise figure1 nf1 exclude pcb & connector losses *2 - 1.5 1.9 db input power 1db gain compression1 p -1db(in) 1 -5.0 0.0 - dbm input 3rd order intercept point1 iip3_1 f1=f rf , f2=f rf +100khz, p in =-26dbm -3.0 +2.0 - dbm isolation1 isl1 exclude pcb & connector losses *1 - -19 - db rf in vswr1 vswri1 - 1.5 2.3 - rf out vswr1 vswro1 - 1.5 2.2 - electrical characteristics rf characteristics2 (low gain mode) conditions: v dd =2.8v, v ctl =0v, f rf =170~900mhz, t a =+25c, z s =z l =50ohm, with application circuit parameters symbol conditions min typ max units frequency f rf 170 620 1680 mhz small signal gain2 gain2 exclude pcb & connector losses*1 -2.5 -1.0 - db input power at 1db gain compression2 p -1db(in) 2 +14.0 +17.0 - dbm input 3rd order intercept point2 iip3_2 f1=f rf , f2=f rf +100khz, p in =-8dbm +17.0 +22.0 - dbm rf in vswr2 vswri2 - 1.5 2.0 - rf out vswr2 vswro2 - 1.5 2.0 - *1 input & output pcb and connector losses: 0.035db(at 170mhz), 0.088db(620mhz), 0.120db(at 900mhz), 0.206db(at 1680mhz) *2 input pcb and connector losses: 0.018db(170mhz), 0.044db(620mhz), 0.060db(900mhz), 0.103db(at 1680mhz)
NJG1142KA1 - 4 - terminal information no. symbol description 1 vctl control voltage supply terminal. 2 gnd ground terminal. these terminals should be connected to the ground plane as close as possible for excellent rf performance. 3 rfout rf output terminal. this terminal is also the power supply terminal of the lna. please use inductor (l1) to connect power supply. 4 gnd ground terminal. these terminals should be connected to the ground plane as close as possible for excellent rf performance. 5 gnd ground terminal. these terminals should be connected to the ground plane as close as possible for excellent rf performance. 6 rfin rf input terminal. this ic is integrated an input dc blocking capacitor.
NJG1142KA1 - 5 - electrical characteristics (high gain mode) (condition :ta=+25 , v dd =2.8v, v ctl =1.8v, zs=zl=50ohm, with application circuit) -40 -30 -20 -10 0 10 20 -40 -30 -20 -10 0 10 pout (dbm) pin (dbm) p-1db(in)=0dbm pout pout vs. pin (freq=620mhz) 6 8 10 12 14 16 0 10 20 30 40 50 -40 -30 -20 -10 0 10 gain (db) i dd (ma) pin (dbm) gain i dd gain, i dd vs. pin (freq=620mhz) p-1db(in)=0dbm -100 -80 -60 -40 -20 0 20 -40 -30 -20 -10 0 10 20 pout, im3 (dbm) pin (dbm) pout im3 pout, im3 vs. pin (f1=620mhz, f2=f1+100khz) iip3=+2.4dbm 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 0 500 1000 1500 2000 noise figure (db) gain (db) frequency (mhz) nf gain nf, gain vs. frequency (freq=50~2000mhz) (exclude pcb, connector losses) 0 5 10 15 20 0 500 1000 1500 2000 iip3, oip3 vs. frequency (f1=50~2000mhz, f2=f1+100khz, pin=-26dbm) iip3, oip3 (dbm) frequency (mhz) oip3 iip3 -10 -5 0 5 10 0 500 1000 1500 2000 p-1db(in) vs. frequency (freq=50~2000mhz) p-1db(in) (dbm) frequency (mhz)
NJG1142KA1 - 6 - electrical characteristics(high gain mode) (condition :ta=+25 , v ctl =1.8v, zs=zl=50ohm, with application circuit) 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 1.5 2.0 2.5 3.0 3.5 4.0 4.5 noise figure (db) gain (db) v dd (v) nf gain nf, gain vs. v dd (freq=620mhz) (exclude pcb, connector losses) 0 5 10 15 20 1.5 2.0 2.5 3.0 3.5 4.0 4.5 iip3, oip3 vs. v dd (f1=620mhz, f2=f1+100khz, pin=-26dbm) iip3, oip3 (dbm) v dd (v) oip3 iip3 1 1.5 2 2.5 3 1.5 2.0 2.5 3.0 3.5 4.0 4.5 vswr vs. v dd (freq=620mhz) vswr v dd (v) vswro vswri 0 2 4 6 8 10 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i dd vs. v dd (rf off) i dd (ma) v dd (v) -10 -5 0 5 10 1.5 2.0 2.5 3.0 3.5 4.0 4.5 p-1db(in) vs. v dd (freq=620mhz) p-1db(in) (dbm) v dd (v) -30 -25 -20 -15 -10 -5 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 isolation vs. v dd (freq=620mhz) isolation (db) v dd (v)
NJG1142KA1 - 7 - electrical characteristics (high gain mode) (condition : v dd =2.8v, v ctl =1.8v, zs=zl=50ohm, with application circuit) 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 -40-200 20406080100 noise figure (db) gain (db) temperature ( o c) nf gain nf, gain vs. temperature (freq=620mhz) (exclude pcb, connector losses) -10 -5 0 5 10 -40-20 0 20406080100 p-1db(in) vs. tempareture (freq=620mhz) p-1db(in) (dbm) tempareture ( o c) 0 5 10 15 20 -40-20 0 20406080100 iip3, oip3 vs. temperature (f1=620mhz, f2=f1+100khz, pin=-26dbm) iip3, oip3 (dbm) temperature ( o c) oip3 iip3 1 1.5 2 2.5 3 -40-20 0 20406080100 vswr vs. temperature (freq=620mhz) vswr temperature ( o c) vswro vswri 0 2 4 6 8 10 0 5 10 15 20 25 -40-200 20406080100 i dd (ma) i ctl ( a) temperature ( o c) i dd i ctl i dd , i ctl vs. temperature (rf off) -30 -25 -20 -15 -10 -5 0 -40-20 0 20406080100 isolation vs. temperature (freq=620mhz) isolation (db) temperature ( o c)
NJG1142KA1 - 8 - electrical characteristics(high gain mode) (condition :ta=+25 , v dd =2.8v, v ctl =1.8v, zs=zl=50ohm, with application circuit) s11, s22 s21, s12 zin, zout vswri, vswro
NJG1142KA1 - 9 - electrical characteristics (high gain mode) (condition :ta=+25 , v dd =2.8v, v ctl =1.8v, zs=zl=50ohm, with application circuit) s21, s12 (50mhz~20ghz) s11, s22 (50mhz~20ghz) 0 5 10 15 20 0.0 5.0 10 15 20 k factor vs. frequency (freq=50mhz~20ghz) -40 o c -20 o c 0 o c +25 o c +60 o c +85 o c k factor frequency (ghz)
NJG1142KA1 - 10 - electrical characteristics (low gain mode) (condition :ta=+25 , v dd =2.8v, v ctl =0v, zs=zl=50ohm, with application circuit) -40 -30 -20 -10 0 10 20 -40 -30 -20 -10 0 10 20 30 pout (dbm) pin (dbm) p-1db(in)=+22.2dbm pout pout vs. pin (freq=620mhz) -10 -8 -6 -4 -2 0 0 10 20 30 40 50 -40-30-20-10 0 10 20 30 gain (db) i dd ( a) pin (dbm) gain i dd gain, i dd vs. pin (freq=620mhz) p-1db(in)=22.2dbm -100 -80 -60 -40 -20 0 20 40 -30 -20 -10 0 10 20 30 pout, im3 (dbm) pin (dbm) pout im3 pout, im3 vs. pin (f1=620mhz, f2=f1+100khz) iip3=+23.8dbm -10 -8 -6 -4 -2 0 0 500 1000 1500 2000 gain vs. frequency (freq=50~2000mhz) gain (db) frequency (mhz) 10 15 20 25 30 0 500 1000 1500 2000 iip3, oip3 vs. frequency (f1=50~2000mhz, f2=f1+100khz, pin=-8dbm) iip3, oip3 (dbm) frequency (mhz) oip3 iip3 5 10 15 20 25 0 500 1000 1500 2000 p-1db(in) vs. frequency (freq=50~2000mhz) p-1db(in) (dbm) frequency (mhz)
NJG1142KA1 - 11 - electrical characteristics (low gain mode) (condition :ta=+25 , v ctl =0v, zs=zl=50ohm, with application circuit) -5 -4 -3 -2 -1 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 gain vs. v dd (freq=620mhz) gain (db) v dd (v) 10 15 20 25 30 1.5 2.0 2.5 3.0 3.5 4.0 4.5 iip3, oip3 vs. v dd (f1=620mhz, f2=f1+100khz, pin=-8dbm) iip3, oip3 (dbm) v dd (v) oip3 iip3 1 1.2 1.4 1.6 1.8 2 1.5 2.0 2.5 3.0 3.5 4.0 4.5 vswr vs. v dd (freq=620mhz) vswr v dd (v) vswro vswri 0 5 10 15 20 25 30 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i dd vs. v dd (rf off) i dd ( a) v dd (v) 5 10 15 20 25 1.5 2.0 2.5 3.0 3.5 4.0 4.5 p-1db(in) vs. v dd (freq=620mhz) p-1db(in) (dbm) v dd (v)
NJG1142KA1 - 12 - electrical characteristics (low gain mode) (condition : v dd =2.8v, v ctl =0v, zs=zl=50ohm, with application circuit) -5 -4 -3 -2 -1 0 -40-20 0 20406080100 gain vs. temperature (freq=620mhz) gain (db) temperature ( o c) 5 10 15 20 25 -40-20 0 20406080100 p-1db(in) vs. tempareture (freq=620mhz) p-1db(in) (dbm) tempareture ( o c) 10 15 20 25 30 -40-20 0 20406080100 iip3, oip3 vs. temperature (f1=620mhz, f2=f1+100khz, pin=-8dbm) iip3, oip3 (dbm) temperature ( o c) oip3 iip3 1 1.2 1.4 1.6 1.8 2 -40-20 0 20406080100 vswr vs. temperature (freq=620mhz) vswr temperature ( o c) vswro vswri 0 5 10 15 20 25 30 -40-20 0 20406080100 i dd vs. temperature (rf off) i dd ( a) temperature ( o c) 0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i dd vs. v ctl (rf off) -40 o c -20 o c 0 o c +25 o c +60 o c +85 o c i dd (ma) v ctl (v)
NJG1142KA1 - 13 - electrical characteristics (low gain mode) (condition :ta=+25 , v dd =2.8v, v ctl =0v, zs=zl=50ohm,with application circuit) s11, s22 s21, s12 zin, zout vswri, vswro
NJG1142KA1 - 14 - electrical characteristics (low gain mode) (condition :ta=+25 , v dd =2.8v, v ctl =0v, zs=zl=50ohm,with application circuit) s21, s12 (50mhz~20ghz) s11, s22 (50mhz~20ghz) 0 5 10 15 20 0.0 5.0 10 15 20 k factor vs. frequency (freq=50mhz~20ghz) -40 o c -20 o c 0 o c +25 o c +60 o c +85 o c k factor frequency (ghz)
NJG1142KA1 - 15 - application circuit test pcb layout parts list parts id. notes l1 taiyo-yuden hk1005 series c1, c2 murata grm15 series pcb (fr-4): t=0.2mm microstrip line width =0.40mm (z 0 =50 ) pcb size=16.8mm x 16.8mm precaution: ? in order not to couple with terminal rfin and rfout, please layout ground pattern under the ic. (top view) rf in v ctl rf out v dd l1 270nh c1 330pf c2 1000pf rfout 3 4 5 6 2 1 rfin rfout vctl gnd gnd gnd lo g ic circuit bias circuit 1pin index (top view) v dd rf in rf out l1 c1 c2 1pin index v ctl notes: ? l1 is an rf choke. (dc feed inductor) ? c1 is a coupling and dc blocking capacitor at the output. ? c2 is a b yp ass ca p acitor.
NJG1142KA1 - 16 - measurement block diagram s parameter measurements iip3 measurements s parameter measurement block diagram rf out v dd rf in dut network a nal y zer port 1 port 2 if and im3 measurement block diagram for iip3 high gain mode rf out rf in signal generator freq.1 freq.2 2db attenuator 2db attenuator power comb. v dd dut signal generator 3db attenuator spectrum a nal y zer 3db attenuator rf out rf in spectrum freq.1 2db attenuator rf amp. v dd dut signal generator a nal y zer 2db 6db attenuator 10db attenuator attenuator if and im3 measurement block diagram for iip3 low gain mode
NJG1142KA1 - 17 - noise figure measurements calibration setup noise source (agilent 346a) nf analyzer (agilent 8973a) input (50 ) noise source drive output * noise source and nf analyzer are connected directly. measurement setup noise source (agilent 346a) nf analyzer (agilent 8973a) input (50 ) noise source drive output * noise source and dut, dut and nf analyzer are connected directly. dut in out measuring instruments nf analyzer : agilent 8973a noise source : agilent 346a setting the nf analyzer measurement mode form device under test : amplifier system downconverter : off mode setup form sideband : lsb averages : 8 average mode : point bandwidth : 4mhz loss comp : off tcold : setting the temperature of noise source (300.0k)
NJG1142KA1 - 18 - package outline (flp6-a1) cautions on using this product this product contains gallium-arsenide (gaas) which is a harmful material. ? do not eat or put into mouth. ? do not dispose in fire or break up this product. ? do not chemically make gas or powder with this product. ? to waste this p roduct, p lease obe y the relatin g law of y our countr y . this product may be damaged with electric static discharge (esd) or spike voltage. please handle with care to avoid these dama g es. [caution] the specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. the application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. 1.6 0.05 1.6 0.05 1.2 0.05 0.5 0.5 0.55 0.05 0.1 0.1 0.22 0.05 0.13 0.05 0.2 0.1 0.2 0.1 unit: mm

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